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A silicon donor layer in heavily doped GaN |
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| Authors: | I V Osinnykh K S Zhuravlev T V Malin B Ya Ber D Yu Kazancev |
| Institution: | 1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia 2. Novosibirsk State University, Novosibirsk, 630090, Russia 3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
| Abstract: | The properties of GaN layers heavily doped with silicon are investigated via photoluminescence spectroscopy. It is shown that excitons cease localizing on donors at a silicon atom concentration of 1.6 × 1019 cm?3; at higher dopant concentrations, the excitons decay. It is established that the donor binding energy falls as the silicon concentration rises. |
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