锆离子注入锆-4合金缺陷的慢正电子研究

采用慢正电子束多普勒展宽谱研究了Zr离子注入Zr-4合金产生的缺陷及其退火回复行为，发现经过大于离子注入剂量为1×10¹⁶cm^-2的样品所产生的缺陷在注入过程中已经回复，而对剂量为1×10¹⁵cm^-2样品做300℃退火处理，其缺陷基本回复，得出合金缺陷回复能较低的结论. 考虑到材料的缺陷含量越高，其抗腐蚀性能越差，在辐照环境下通过给材料保持一定温度，即可使其缺陷得到较好回复，从而提高材料的抗腐蚀性能.

Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam

The effect of Zr-ion implantation into zircaloy-4 and the defect recovery was investigated by slow positron beam. Specimens were implanted by zirconium ions with doses ranging from 1×10¹⁵ to 1×10¹⁷ ions/cm² using a MEVVA source at an extract voltage of 50 kV. It was found that defects in the samples irradiated with a dose above 1×10¹⁶ ions/cm² has been recovered during the implantation process, and the thickness of oxide layer increases as indicated by auger electron spectroscopy (AES) measurements. Meanwhile, the defects in the sample implanted with a dose of 1×10¹⁵ions/cm² turns out to be recovered after annealing at 300℃ in high vacuum for 1 hour, showing the corresponding the recovery energy of defects is very low. We propose the method of keeping the material at an appropriate temperature during implantation to improve the corrosion resistance of Zr-4 alloy, according to the relationship between the defect concentration and the corrosion resistance.