表面注入P-top区double RESURF功率器件表面电场模型

提出表面注入P-top区double RESURF功率器件表面电场和击穿电压解析模型. 基于分区求解二维Poisson方程, 获得double RESURF表面电场的解析式. 借助此模型, 研究了器件结构参数对表面电场和电势的影响; 计算了漂移区长度和厚度与击穿电压的关系, 给出了获得最大击穿电压和最小导通电阻的途径. 数值结果, 解析结果和试验结果符合较好.

Analytical model for the surface electrical field distribution of double RESURF device with surface implanted P-top region

An analytical model for the surface electrical field distributions of double RESURF devices with Gaussian-doped P-top region is presented. Based on solvisng the 2-D Poisson equation, the model gives the closed form solutions of the surface potential and electrical field distribution as functions of the structure parameters and drain bias. The dependence of breakdown voltage on drift region length and thickness is calculated. An effectual way to get the optimum high-voltage devices is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the presented model.