利用直流磁控溅射法在柔性衬底上制备ZnO:Zr新型透明导电薄膜(英文)

室温下利用直流磁控溅射法在有ZnO缓冲层的柔性衬底 PET上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO: Zr)透明导电薄膜,研究了厚度对ZnO: Zr薄膜结构及光电性能的影响.结果表明,ZnO: Zr薄膜为六方纤锌矿结构的多晶薄膜.实验获得ZnO: Zr薄膜的最小电阻率为2.4×10-3 Ω·cm,其霍尔迁移率为18.9 cm2·V-1·s-1 ,载流子浓度为2.3×1020 cm-3.实验制备的ZnO: Zr薄膜具有良好的附着性能,其可见光平均透过率超过92%.

A Novel Transparent Conducting ZnO:Zr Films Deposited on ZnO-buffered Flexible Substrates by DC Magnetron Sputtering

Transparent conducting Zr-doped ZnO(ZnO:Zr) thin films with high transparency and low resistivity were successfully prepared on ZnO-buffered polyethylene glycol terephthalate (PET) by DC magnetron sputtering at room temperature. The effects of the thickness on the structural, electrical and optical properties of the films were studied in detail. The experimental results reveal that all the deposited films are polycrystalline with a hexagonal structure. The lowest resistivity achieved is 2.4×10-3 Ω·cm for a thickness of 151 nm with a Hall mobility of 18.9 cm2·V-1·s-1 and a carrier concentration of 2.3×1020 cm-3 . All the films present a high transmittance of above 92% in the wavelength range of the visible spectrum.