A millimeter-wave monolithic grid amplifier |
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| Authors: | Cheh-Ming Liu Emilio A Sovero Wu Jing Ho J A Higgins and David B Rutledge |
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| Institution: | (1) Department of Electrical Engineering, California Institute of Technology, 91125 Pasadena, CA;(2) Rockwell International Corporation, 1049 Camino Dos Rios, 91385 Thousand Oaks, CA |
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| Abstract: | A 36-element monolithic grid amplifier has been fabricated. The peak gain is 5 dB at 40.8 GHz with a 3-dB bandwidth of 1.4 GHz. The active elements are pairs of heterojunction-bipolar-transistor's (HBT's). The individual transistors in the grid have a maximum oscillation frequency,f
max
, of 100 GHz. The grid includes base stabilizing capacitors which result in a highly stable grid. This is the first report of a successful monolithic grid amplifier. |
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| Keywords: | Grid Amplifier Quasioptical Amplifier Monolithic Technology |
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