| 基于离子注入技术的ZnMnO半导体材料的制备及光谱表征 |
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| 引用本文： | 钟红梅,陈效双,王金斌,夏长生,王少伟,李志锋,徐文兰,陆卫.基于离子注入技术的ZnMnO半导体材料的制备及光谱表征[J].物理学报,2006,55(4):2073-2077. |
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| 作者姓名： | 钟红梅 陈效双 王金斌 夏长生 王少伟 李志锋 徐文兰 陆卫 |
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| 作者单位： | 中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 通过离子注入技术制备了ZnMnO半导体材料，研究离子注入剂量与退火对材料光谱性质的影 响.Raman光谱研究发现，575cm-1处声子模展宽是由高剂量Mn注入引起的缺陷所 致，退火样品528cm-1振动模来自Mn相关的杂质振动.室温光致发光谱表明，退 火对高剂量注入样品的可见发光带有增强作用.
关键词：
ZnMnO
离子注入
Raman光谱
室温光致发光
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| 关 键 词： | ZnMnO 离子注入 Raman光谱 室温光致发光 |
| 收稿时间： | 04 13 2005 12:00AM |
| 修稿时间： | 2005-04-132005-11-10 |
Preparation of ZnMnO by ion implantation and its spectral characterization |
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| Zhong Hong-Mei,Chen Xiao-Shuang,Wang Jin-Bin,Xia Chang-Sheng,Wang Shao-Wei,Li Zhi-Feng,Xu Wen-Lan,Lu Wei.Preparation of ZnMnO by ion implantation and its spectral characterization[J].Acta Physica Sinica,2006,55(4):2073-2077. |
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| Authors: | Zhong Hong-Mei Chen Xiao-Shuang Wang Jin-Bin Xia Chang-Sheng Wang Shao-Wei Li Zhi-Feng Xu Wen-Lan Lu Wei |
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| Institution: | National Laboratory for Infrared Physics, Shanghai Institute of Technical PhysiCs, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn impla ntion. We studied the influence of implantation dose and annealing on its optica l properties. The broad band at 575cm-1 in Raman spectrum is attribut ed to defects related to high-dose Mn implantion. The vibration modes at 528cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantion can enhance the intensity in visible band. |
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| Keywords: | ZnMnO |
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