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SIMS study of the concentration of dopants in LPCVD silicon thin films |
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| Authors: | S K Wong N Du P K John and B Y Tong |
| Institution: | b Department of Physics, University of Western Ontario, London, Ontario, Canada a Department of Chemistry, University of Western Ontario, London, Ontario, Canada |
| Abstract: | Measurements of solid phase dopant concentration (S) of LPCVD Si thin films as a function of substrate temperature (Ts = 500−640 ° C) and gas phase doping ratio (R = 1 × 10−5 −4 × 10−2) by SIMS indicate different behaviors of P and B in the films. A linear relation S = b(T)R is observed for B-doped film with b(T) varying from 4 to 50 depending on Ts. Boron-doped microcrystalline film has a higher doping efficiency than that of P-doped ones. |
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