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Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures |
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| Authors: | M R Deshpande J W Sleight M A Reed R G Wheeler R J Matyi |
| Institution: | aDepartments of Physics, Applied Physics, and Electrical Engineering, Yale University, P.O. Box 208120, New Haven, CT 06520, U.S.A.;bCentral Research Laboratories, Texas Instruments Incorporated, Dallas, TX 75265, U.S.A. |
| Abstract: | Zeeman splitting of the ground state of single impurities in the quantum wells of resonant tunneling heterostructures is reported. We determine the absolute magnitude of the effective magnetic spin splitting factorg* for a single impurity in a 44 Å Al0.27Ga0.73As/GaAs/Al0.27Ga0.73As quantum well to be 0.28±0.02. This system also allows for independent measurement of the electron tunneling rates through the two potential barriers and estimation of the occupation probability of the impurity state in the quantum well. |
| Keywords: | resonant tunneling heterostructures spingfactor electron tunneling rates |
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