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Comparison between c-cut and a-cut Nd:YVO4 lasers passively Q-switched with a Cr4+:YAG saturable absorber |
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| Authors: | Y.-F. Chen Y.P. Lan |
| Affiliation: | (1) Department of Electrophysics, National Chiao Tung University, 1001 TA Hsueh Road, Hsinchu, Taiwan, 30050, TW;(2) Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 TA Hsueh Road, Hsinchu, Taiwan, 30050, TW |
| Abstract: | Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (>10 kW) lasers. Received:10December2001/Revisedversion:22January2002 / Published online: 14 March 2002 |
| Keywords: | PACS: 42.60.B 42.65 42.70 |
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