Effects of structural disorders on sequential tunneling in multiple quantum wells |
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| Institution: | 1. Department of Physics and Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China;2. School of Physics, Nankai University, Tianjin 300350, China;1. Key Laboratory of Materials for High Power Laser, Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China;1. Departamento de Física, Universidad Nacional del Sur, Avenida Alem 1253, B8000CPB, Bahía Blanca, Argentina;2. Instituto de Física del Sur (IFISUR, UNS-CONICET), Avenida Alem 1253, B8000CPB, Bahía Blanca, Argentina;1. Medicine of the Ageing, Department of Geriatrics, Neuroscience and Orthopedics, Italy;2. Department of Neuroimaging, Catholic University, Roma, Italy;1. Department of Psychiatry, Royal College of Surgeons, Dublin, Ireland;2. Orygen Youth Health, North Western Mental Health Service, Melbourne, Australia;3. Orygen Youth Health Research Centre, Centre for Youth Mental Health, University of Melbourne, Melbourne, Australia;4. Telethon Kids Institute, The University of Western Australia, Australia;5. School of Psychology, University of Birmingham, UK;6. Melbourne Neuropsychiatry Centre, Department of Psychiatry, University of Melbourne & Melbourne Health, Australia;7. Institute of Brain, Behaviour and Mental Health, University of Manchester, UK;8. Warwick University and Coventry and Warwickshire Partnership Trust, UK |
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| Abstract: | Based on an isotropic random distribution model, the effects of structural disorders embedded in the barriers on the sequential electron tunneling in multiple quantum wells were studied at low temperatures. By using a sequential tunneling model Stievenard et al., Appl. Phys. Lett. 61 (1992) 1582], the transmission coefficient through a single barrier was calculated using a finite-difference method and averaged over random configurations of disorders. To compute the tunneling current, a self-consistent calculation for the electronic states was performed, including the Hartree and exchange interactions and non-parabolic energy dispersion. Both disorder-assisted and disorder-impeded electron tunneling phenomena were found as a function of the activation energy. The effects of electric field, barrier width, and temperature were also studied. The predicted resonant disorder-assisted electron tunneling should be large enough to be observable at low temperatures in an experiment. |
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