Calculation of the carrier-induced refractive index change in InSb

We report a theoretical model for an estimate of carrier-induced changes in the refractive index of InSb at room temperature. The dispersion of n within the photon-energy interval of 0.12–0.24 eV is investigated for nonequilibrium carrier concentrations of 10¹⁵–10¹⁸ cm^–3. An analysis of the influence of the initial carrier density on n is performed. The obtained results can help to develop InSb opto-electronic devices.