Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures |
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Authors: | A P Baraban L V Miloglyadova |
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Institution: | (1) Research Institute of Physics, St. Petersburg State University, Ul’yanovskaya ul. 1, St. Petersburg, 198904, Russia |
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Abstract: | Electroluminescence and high-frequency voltage-capacitance methods are used to study Si/SiO2 structures obtained by thermal oxidation of KéF-5 (100)Si wafers at 950°C in wet oxygen (oxide thickness 250 nm). The structures are irradiated by 130-keV argon ions with doses in the range of 1013?3.2×1017 cm?2. A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer is established, and a model of defect formation is proposed. |
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