The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam |
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| Authors: | Yu J I Kim K H Bae I H Lee D Y Kim D L |
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| Institution: | Department of Physics, Yeungnam University, Gyeongsan 712-749, South Korea. |
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| Abstract: | Photoreflectance measurements were performed to investigate the optical properties in the electron beam irradiation semi-insulating GaAs(e-beam irradiation GaAs) and semi-insulating GaAs(SI-GaAs). A considerable increase of the PR amplitudes has been registered after the e-beam irradiation in comparison with the GaAs. It is that result of a higher electron scattering on the lattice defects created by the e-beam. |
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