In-plane dielectric characterization of sol–gel derived PLZT (9/65/35) thin films using an interdigital electrode configuration |
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Authors: | DY Wang YL Cheng J Wang XY Zhou HLW Chan CL Choy |
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Institution: | (1) Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China |
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Abstract: | Lead lanthanum zirconate titanate (PLZT 9/65/35) thin films were deposited on MgO (00l) substrates using a sol–gel method. X-ray diffraction measurements reveal that the PLZT film has epitaxially grown on the substrate and has a pure perovskite structure. Using gold interdigital electrodes the in-plane dielectric properties of the films were measured as a function of frequency (1 kHz to 10 GHz), temperature (293–435 K) and dc electric field (0–20 MV/m). The PLZT (9/65/35) thin film exhibits a diffuse phase transition, which indicates a relaxor-like ferroelectric behavior. The temperature dependence of the characteristic relaxation time was analyzed in terms of the Vögel–Fulcher relation. The relative permittivity has a high tunability of 34–42% in the frequency range of 10 MHz to 1 GHz. |
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