The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD) |
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| Affiliation: | 1. Departamento de Física e Química, Instituto de Ciências Exatas, Universidade Federal de Itajubá, Avenida BPS 1303, 37500 903-Itajubá/MG, Brasil, Brazil;2. Centro de Ciência e Tecnologia dos Materiais, CCTE, Instituto de Pesquisas Energéticas e Nucleares, Brazil;1. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK;2. Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, PR China;3. Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, PR China;1. Leibniz-Institute for Surface Modification, Permoserstrasse 15, D-04303 Leipzig, Germany;2. Wilhelm-Ostwald-Institute of Physical and Theoretical Chemistry, University Leipzig, Linnéstrasse 2, D-04103 Leipzig, Germany |
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| Abstract: | ![]()
ZnSe epitaxy layers were grown on (1 0 0)GaAs substrates by photo-assisted MOCVD using DMZn and DMSe as group II and VI sources, respectively. Irradiation can improve the growth rate efficiently, but the irradiation intensity influences the growth rate and the crystalline quality negligibly in a large range. Due to an oxidation reaction on the surface of ZnSe, the growth rate and the flow ratio of group II and VI sources influence the crystalline quality. |
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