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Quantum cascade electroluminescence in GaAs/AlGaAs structures
Authors:P Kruck  G Strasser  M Helm  L Hvozdara  E Gornik
Abstract:The operation of a unipolar quantum cascade light-emitting diode based on the material system GaAs/AlGaAs is reported. The LED operates at a wavelength of 6.9 μm. Detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm2 the optical output power lies in the ten 10 nW range. Additional absorption and photocurrent measurements provide a complete characterization of the mid-infrared emitter.
Keywords:Electroluminescence  Semiconductor quantum wells  Unipolar semiconductor laser  Light-emitting diode
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