320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320×256 IR FPA operating in 8–12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02×10⁻⁷ W/cm², 4.1×10⁸ V/W and 27 mK, respectively.