The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions |
| |
Authors: | Chen Yong-Sheng Xu Yan-Hu Gu Jin-Hu Lu Jing-Xiao Yang Shi-E and Gao Xiao-Yong |
| |
Institution: | Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China |
| |
Abstract: | The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy, spectroscopic ellipsometer and atomic force microscopy. It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH4 and the amorphous induction of glass surface during the initial ignition process, and growth of the incubation layer can be suppressed and uniform μc-Si:H phase is generated by the application of delayed initial SiH4 density and silane profiling methods. |
| |
Keywords: | microcrystalline silicon thin film amorphous incubation layer |
本文献已被 CNKI 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |