纳米多孔SiO2薄膜的制备与红外光谱研究

以正硅酸乙酯为原料,采用溶胶-凝胶法,结合旋转涂胶、超临界干燥工艺在硅片上制备了纳米多孔SiO2薄膜。XRD表明薄膜为无定形态;SEM显示薄膜具有多孔网络结构,其SiO2粒子直径为10~20nm。利用FTIR研究了薄膜的结构,纳米多孔SiO2薄膜含有Si—O—Si与Si—OR结构,呈疏水性;该SiO2薄膜热处理后因含有Si—OH基团而呈吸水性;用三甲基氯硅烷对热处理SiO2薄膜进行修饰可使其呈疏水性,修饰后的薄膜在N2中温度不高于450℃可保持其疏水性与多孔结构。

Preparation and Infrared Spectral Analysis of Nanoporous Silica Thin Film

Crack-free homogeneous nanoporous silica films on silicon wafer have been synthesized via supercritical drying of wet gel films obtained by spin-coating the polymeric silica sol, which was prepared using sol-gel method with tetraethoxysilane (TEOS) as precursor. The film is amorphous and nanoporous, and three-dimensional network, cross-linked by the primary particles whose sizes distribute between 10-20 nm showed respectively by XRD and SEM micrograph. The structure of the nanoporous SiO2 thin film was studied by FTIR spectra. The SiO2 thin film was composed of Si-O-Si and Si-OR, and was hydrophobic. The film contained Si-OH and became hydrophilic after being heat-treated at 250 degrees C or above in air. The heat-treated SiO2 thin film becomes hydrophobic by reacting with trimethylchlorosilane(TMCS). The TMCS-modified SiO2 thin film remains hydrophobic and can keep its nanoporous structure at a temperature lower than 450 degrees C in nitrogen.