Contactless gating,surface charging and illumination effects in a buried Al<Subscript>0.24</Subscript>Ga<Subscript>0.76</Subscript>As/GaAs quantum well structure期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Contactless gating,surface charging and illumination effects in a buried Al0.24Ga0.76As/GaAs quantum well structure

Authors:	M.?Biasini mailto:biasini@physics.ucr.edu" title=" biasini@physics.ucr.edu" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author,R. D.?Gann,L. N.?Pfeiffer,K. W.?West,X. P.A.?Gao,B. C.D.?Williams,J. A.?Yarmoff,A. P.?MillsJr

Affiliation:	(1) Department of Physics, University of California Riverside, Riverside, CA 92521, USA;(2) ENEA, Via Don Fiammelli 2, 40129 Bologna, Italy;(3) Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA;(4) Los Alamos National Laboratory, Los Alamos, NM 87545, USA

Abstract:	The conductivity of an Al_0.24Ga_0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density $n=2.5 times 10^{11},mbox{el/cm}^2$ . Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ₀ ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.

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