Free and bound electron transitions to acceptors in indium phosphide |
| |
| Authors: | J.U. FischbachG. Benz N. StathM.H. Pilkuhn |
| |
| Affiliation: | Physikalisches Institut der UniversitatStuttgart, D7000Stuttgart 1, Wiederholdstr. 13, Germany |
| |
| Abstract: | ![]()
In epitaxial InP a new emission band at 1.3776 eV is identified as the free electron-acceptor transition. It is investigated in connection with the corresponding donor-acceptor pair band at 1.374 eV. This permits an individual determination of the acceptor and donor binding energies (48 ± 1 meV and 7.3 ± 0.6 meV respectively). A second new emission band at 1.396 eV is reported and discussed. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
