Quantum‐Transport Characteristics of a p–n Junction on Single‐Layer TiS3

By using density functional theory and non‐equilibrium Green′s function‐based methods, we investigated the electronic and transport properties of a TiS₃ monolayer p–n junction. We constructed a lateral p–n junction on a TiS₃ monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS₃ p–n junction. In addition, the spin‐dependent current–voltage characteristics of the constructed TiS₃ p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin‐polarized currents in the TiS₃ p–n junction. These prominent conduction properties of the TiS₃ p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single‐layered material.