Engineering Chemically Exfoliated Large‐Area Two‐Dimensional MoS2 Nanolayers with Porphyrins for Improved Light Harvesting

Molybdenum disulfide (MoS₂) is a promising candidate for electronic and optoelectronic applications. However, its application in light harvesting has been limited in part due to crystal defects, often related to small crystallite sizes, which diminish charge separation and transfer. Here we demonstrate a surface‐engineering strategy for 2D MoS₂ to improve its photoelectrochemical properties. Chemically exfoliated large‐area MoS₂ thin films were interfaced with eight molecules from three porphyrin families: zinc(II)‐, gallium(III)‐, iron(III)‐centered, and metal‐free protoporphyrin IX (ZnPP, GaPP, FePP, H₂PP); metal‐free and zinc(II) tetra‐(N‐methyl‐4‐pyridyl)porphyrin (H₂T4, ZnT4); and metal‐free and zinc(II) tetraphenylporphyrin (H₂TPP, ZnTPP). We found that the photocurrents from MoS₂ films under visible‐light illumination are strongly dependent on the interfacial molecules and that the photocurrent enhancement is closely correlated with the highest occupied molecular orbital (HOMO) levels of the porphyrins, which suppress the recombination of electron–hole pairs in the photoexcited MoS₂ films. A maximum tenfold increase was observed for MoS₂ functionalized with ZnPP compared with pristine MoS₂ films, whereas ZnT4‐functionalized MoS₂ demonstrated small increases in photocurrent. The application of bias voltage on MoS₂ films can further promote photocurrent enhancements and control current directions. Our results suggest a facile route to render 2D MoS₂ films useful for potential high‐performance light‐harvesting applications.