| n-GaN肖特基势垒二极管的高温电子辐照效应 |
| |
| 引用本文： | 谢宛玲,杨治美,钟志亲,吴健,林海,马瑶,袁菁,龚敏.n-GaN肖特基势垒二极管的高温电子辐照效应[J].光散射学报,2006,18(3):277-281. |
| |
| 作者姓名： | 谢宛玲 杨治美 钟志亲 吴健 林海 马瑶 袁菁 龚敏 |
| |
| 作者单位： | 四川大学,物理科学与技术学院微电子学系,微电子技术四川省重点实验室,成都,610064 |
| |
| 摘 要： | 本文研究了n-GaN肖特基势垒二极管的高温电子辐照效应。实验结果显示,高温下进行电子辐照,界面处辐照诱生缺陷会同时产生和被退火恢复;器件的击穿电压和反向漏电流受辐照影响减弱,其电学阈值增加;由辐照效应导致的可见光响应的影响仍然存在。
|
| 关 键 词： | GaN肖特基势垒二极管 高温 电子辐照 |
| 文章编号： | 1004-5929（2006）03-0277-05 |
| 收稿时间： | 2006-03-27 |
| 修稿时间： | 2006年3月27日 |
Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode |
| |
| XIE Wan-ling,YANG Zhi-mei,ZHONG Zhi-qin,WU Jian,LIN Hai,MA Yao,YUAN Jing,GONG Min.Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode[J].Chinese Journal of Light Scattering,2006,18(3):277-281. |
| |
| Authors: | XIE Wan-ling YANG Zhi-mei ZHONG Zhi-qin WU Jian LIN Hai MA Yao YUAN Jing GONG Min |
| |
| Institution: | Dept. of Microelectronics , Sichuan University, Key Lab of Microelectronics of Sichuan Province, Chengdu, Sichuan 610064, P. R. China |
| |
| Abstract: | Studies of the irradiation damage induced by high-temperature electron irradiation in n-type Au/GaN Schottky barrier diode are presented.During the high-temperature electron irradiation,induced-interface-states partly annealed off while they formed.It was detected that the influence of reverse breakdown voltage and reverse leakage current became small,but the influence of visible light was still survived |
| |
| Keywords: | GaN Schottky barrier diode high-temperature electron irradiation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
