|
|||||
|
|
Impurity redistribution in Pb implanted and annealed silicon |
|
| Authors: | CE Christodoulides |
| Institution: | Department of Electrical Engineering, University of Salford, Salford M5 4WT, UK |
| Abstract: | Reordering of 〈111〉 silicon, implanted with Pb ions at energies >100 keV and fluences ～5 × 1015 cm?2 is accompanied by substantial impurity indiffusion in addition to pronounced outdiffusion and accumulation at the near surface region. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |