| InAs/GaAs表面量子点的压电调制反射光谱研究 |
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| 引用本文： | 余晨辉,王茺,龚谦,张波,陆卫.InAs/GaAs表面量子点的压电调制反射光谱研究[J].物理学报,2006,55(9):4934-4939. |
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| 作者姓名： | 余晨辉 王茺 龚谦 张波 陆卫 |
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| 作者单位： | (1)中国科学院上海技术物理研究所，红外物理国家重点实验室，上海 200083; (2)中国科学院上海微系统与信息技术研究所，信息功能材料国家重点实验室，上海 200050 |
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| 摘 要： | 运用压电调制反射光谱(PzR)方法测量了在以GaAs(311)B为衬底的In0.35Ga0.65As模板上生长的InAs表面量子点结构的反射谱.在77K温度下，观察到了来自样品各个组成结构(包括表面量子点本身、被覆盖层覆盖的量子点、In0.35Ga0.65As模板以及GaAs衬底等)的调制信号.来自表面量子点本身的调制信号是多个清晰的调制峰.用一阶和三阶微分洛伦兹线形对PzR谱中对应结构的实验数据进行了拟合，精确确定了与样品的各个组成结构相对应的调制峰的能量位置.对不同样品PzR谱的差异进行了定性的说明.
关键词：
压电调制光谱
InAs/GaAs 表面量子点
洛伦兹线形拟合
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| 关 键 词： | 压电调制光谱 InAs/GaAs 表面量子点 洛伦兹线形拟合 |
| 文章编号： | 1000-3290/2006/55(09)/4934-06 |
| 收稿时间： | 9/1/2005 12:00:00 AM |
| 修稿时间： | 2005-09-012006-03-20 |
A piezomodulated reflectance study of InAs/GaAs surface quantum dots |
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| Yu Chen-Hui,Wang Chong,Gong Qian,Zhang Bo,Lu Wei.A piezomodulated reflectance study of InAs/GaAs surface quantum dots[J].Acta Physica Sinica,2006,55(9):4934-4939. |
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| Authors: | Yu Chen-Hui Wang Chong Gong Qian Zhang Bo Lu Wei |
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| Institution: | 1 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 China ; 2 State Key Laboratory of Functional Materials for Informutics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | Piezomodulated reflectance (PzR) spectra have been measured for two samples of InAs surface quantum dots (SQDs) deposited on GaAs (311)B substrates with In0.35Ga0.65As template. At 77K multiple confined-state SQDs transitions can be clearly resolved from the PzR spectra . The detailed optical transition features of SQDs, QDs buried by capping layer, In0.35Ga0.65As template and GaAs substrate layers were obtained from well-fitted PzR spectra using the first or third derivative of a Lorentz line shape. Differences between PzR results of two samples were discussed qualitatively. |
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| Keywords: | piezomodulated reflectance spectra InAs/GaAs surface QDs Lorentz line shape fitting |
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