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| 用流动注射荧光法测定硅 | |
| 引用本文： | 宋功武. 用流动注射荧光法测定硅[J]. 分析测试技术与仪器, 1997, (4): 241-244. |
| 作者姓名： | 宋功武 |
| 作者单位： | 1.湖北大学分析测试中心 武汉 430062 |
| 摘 要： | 应用流动注射荧光法研究硅钼杂多酸与罗丹明6G的荧光猝天反应,利用该反应建立了痕量硅的测定方法,该方法灵敏度高、简便快速,分析速度可达120样/h,可应用于铜合了金,钢样中硅的测定,取得满意结果. |
| 关 键 词： | 流动注射 荧光猝灭 罗丹明6G 硅 |
| 收稿时间： | 1997-08-20 |
| 修稿时间： | 1997-10-20 |
Flow Injection Analysis for Trace Silicon Determination with Fluorometry |
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| Song Gongwu. Flow Injection Analysis for Trace Silicon Determination with Fluorometry[J]. Analysis and Testing Technology and Instruments, 1997, (4): 241-244. | |
| Authors: | Song Gongwu |
| Affiliation: | 1.Analysis and Testing Center, Hubei University Wuhan 430062 |
| Abstract: | A new fairly selective, simple and rapidy flow injection analysis for the determination with fluorometry is developed, based on the fluorescence equenching effect of Rhodamine 6G due to formation an unfluorescence ion-association complex. Fluorescence was measured at 555 nm(exciation 350nm).Beer's law is obeyed over the concentration range of 0～80μg/L The method was used to determination silicon in steel sample and copper alloys with satisfactoryresults. |
| Keywords: | flow injection analysis fluorescence quenching rhodamine 6G silicon |
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