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| 离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模 | |
| 引用本文： | 王勇刚,马骁宇,付圣贵,范万德,李强,袁树忠,董孝义,宋晏蓉,张志刚. 离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模[J]. 物理学报, 2004, 53(6): 1810-1814 |
| 作者姓名： | 王勇刚 马骁宇 付圣贵 范万德 李强 袁树忠 董孝义 宋晏蓉 张志刚 |
| 作者单位： | 1. 中国科学院半导体研究所,北京,100083 2. 南开大学现代光学研究所,天津,300071 3. 北京工业大学应用数理学院,北京,100022 |
| 摘 要： | 用离子注入的半绝缘GaAs晶片作为吸收体和输出镜，在双包层掺镱光纤激光器上实现了调Q锁模. 离子注入的能量为400keV的As+离子，注入剂量为1016/cm2，然后在600℃下退火20min. 当抽运功率为5W时, 脉冲平均输出功率为200mW, 调Q包络重复频率为50kHz, 半高宽为4μs，锁模脉冲重复频率为15MHz. 关键词：离子注入GaAs掺镱光纤激光器被动调Q锁模 |
| 关 键 词： | 离子注入GaAs 掺镱光纤激光器 被动调Q锁模 |
| 文章编号： | 1000-3290/2004/53(06)/1810-05 |
| 收稿时间： | 2003-07-24 |
Passive Q-switched mode locking of double-clading Yb:fiber laser with ion-implanted GaAs |
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| Wang Yong-Gang,Ma Xiao-Yu,Fu Sheng-Gui,Fan Wan-De,Li Qiang,Yuan Shu-Zhong,Dong Xiao-Yi,Song Yan-Rong and Zhang Zhi-Gang. Passive Q-switched mode locking of double-clading Yb:fiber laser with ion-implanted GaAs[J]. Acta Physica Sinica, 2004, 53(6): 1810-1814 | |
| Authors: | Wang Yong-Gang Ma Xiao-Yu Fu Sheng-Gui Fan Wan-De Li Qiang Yuan Shu-Zhong Dong Xiao-Yi Song Yan-Rong Zhang Zhi-Gang |
| Abstract: | We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 1016/cm2 dose As+ions, and was annealed at 600℃ for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4μs. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge. |
| Keywords: | ion-implanted GaAs Yb:fiber laser passive Q-switched mode locking |
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