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Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions |
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| Authors: | Andrew C C Yu X F Han J Murai Y Ando T Miyazaki K Hiraga |
| Institution: | a Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan b Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan |
| Abstract: | Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers. |
| Keywords: | Magnetoresistance Tunneling Exchange biasing Annealing effect Microstructure Transmission electron microscopy |
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