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The characteristics of Au:VO2 nanocomposite thin film for photo-electricity applications
Affiliation:1. Department of Materials Engineering, Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, New Taipei 243, Taiwan, Republic of China;2. Department of Electronic Engineering, Institute of Electro-Optical Engineering, Chang Gung University, Taoyuan 333, Taiwan, Republic of China;3. Dept. of Electronic Engineering, Ming Chuan University, Taoyuan 333, Taiwan, Republic of China;4. Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, Republic of China
Abstract:
Au nanoparticles have been fabricated on normal glass substrates using nanosphere lithography (NSL) method. Vanadium dioxide has been deposited on Au/glass by reactive radio frequency (rf) magnetron sputtering. The structure and composition were determined by X-ray diffraction and X-ray photoelectron spectroscope. Electrical and optical properties of bare VO2 and Au:VO2 nanocomposite thin films were measured. Typical hysteresis behavior and sharp phase transition were observed. Nanopartical Au could effectively reduce the transition temperature to 40 °C. The transmittance spectrum for both Au:VO2 nanocomposite thin film shows high transmittance under transition temperature and low transmittance above transition temperature. The characteristics present the Au:VO2 nanocomposite thin film can be used for applications, such as “smart window” or “laser protector”.
Keywords:Transmittance  Semiconductor-to-metal phase transition  Nanosphere lithography  Radio frequency magnetron sputtering
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