Luminescence and origin of lead-related centers in single crystalline films of Y2SiO5 and Lu2SiO5 |
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| Institution: | 1. Institute of Physics AS CR, Cukrovarnicka 10, 162 53 Prague, Czech Republic;2. Ivan Franko National University of Lviv, Gen. Tarnavsky 107, 79017 Lviv, Ukraine;3. Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia;4. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Weyssenhoffa sq. 11, 85-090 Bydgoszcz, Poland;1. Department of Physics, University College of Science, Tumkur University, Tumkur 572 103, India;2. Prof. C.N.R. Rao Centre for Advanced Materials, Tumkur University, Tumkur 572 103, India;3. Research Center, Department of Physics, East West Institute of Technology, Magadi Main Road, Bengaluru 560 091, India;4. Chattisgarh Swamy Vivekananda Technological University, Bhilai (CG)-493441, India;5. Department of Chemistry, M.S. Ramaiah Institute of Technology, Bengaluru 560 056, India;1. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85-090 Bydgoszcz, Poland;2. Department of Electronics, Ivan Franko National University of Lviv, 79017 Lviv, Ukraine;3. SSI Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkiv, Ukraine;4. Department of Mathematics and Physics, West Kazakhstan State University, 090000 Uralsk, Kazakhstan;5. Institute of Nuclear Physics, Polish Academy of Sciences, 31-342 Krakow, Poland;1. Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu, Estonia;2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow, Russia;3. Physics Faculty, Moscow State University, 119991 Moscow, Russia;4. D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow, Russia;5. Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk, Russia;6. A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan, Armenia;7. Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk, Russia;8. Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne, France |
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| Abstract: | In the temperature range 4.2–350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics are studied for the undoped Y2SiO5 and Lu2SiO5 single crystalline films grown by liquid phase epitaxy method from the PbO-based flux and, owing to that, containing lead ions substituting for Y3+ or Lu3+ ions. Luminescence characteristics of Pb-related centers of different types are identified. On the basis of the results obtained, we suggest that the ultraviolet emission of Pb-related centers arises from the Pb2+ ions substituting for Y3+ or Lu3+ ions in the Y1 and Lu1 lattice sites of the X2 structure. Possible hypotheses on the origin of the intense complex lead-related blue emission are discussed. We propose phenomenological models describing the excited-state dynamics of the studied luminescence centers. We also determine characteristic parameters of the corresponding relaxed excited states, in particular, the energy separations between the excited states and the rates of the radiative and non-radiative transitions from these states. |
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| Keywords: | Luminescence Oxyorthosilicates Single crystalline films |
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