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Advanced deposition phase diagrams for guiding Si:H-based multijunction solar cells |
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| Authors: | J.A. Stoke N.J. Podraza Jian Li Xinmin Cao Xunming Deng R.W. Collins |
| Affiliation: | 1. Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USA;2. Materials Research Institute, The Pennsylvania State University, University Park, PA 16803, USA;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | Phase diagrams have been established to describe very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) of intrinsic hydrogenated silicon (Si:H) and silicon–germanium alloy (Si1?xGex:H) thin films on crystalline Si substrates that have been over-deposited with n-type amorphous Si:H (a-Si:H). The Si:H and Si1?xGex:H films are prepared under conditions used for the top and middle i-layers of high efficiency triple-junction a-Si:H-based n–i–p solar cells. Identical n/i cell structures were co-deposited in this study on textured (stainless steel)/Ag/ZnO which serve as substrate/back-reflectors in order to relate the phase diagrams to the performance parameters of single-junction solar cells. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si1?xGex:H solar cells are obtained when the i-layers are prepared under previously-described maximal H2 dilution conditions. |
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