Photoelectric features of vacuum-deposited a-Si:H/Alq3 blends |
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| Authors: | K?stutis Arlauskas Arūnas Baronas Nerijus Nekra?as Karolis Kazlauskas |
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| Institution: | 1. Department of Solid State Electronics, Vilnius University, Saul?tekio 9, LT-10222 Vilnius, Lithuania;2. Institute of Materials Science and Applied Research, Vilnius University, Saul?tekio 9, LT-10222 Vilnius, Lithuania;3. Institute of Physics, Savanori? 231, LT-02300 Vilnius, Lithuania;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
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| Abstract: | Using three electrode vacuum system for glow discharge of 5% SiH4 + 95% Ar gas mixture together with thermal evaporation of phosphorus or boric aced, the n- and p-type a-Si:H layers have been deposited. By co-evaporation of phosphorus or boric aced the conductivity of a-Si:H layers was changed in 10?11–10?3 Ω?1 cm?1 or 10?11 –10?8 Ω?1 cm?1 range, respectively. Blends of a-Si:H and tris-(8-hydroxyquinoline) aluminum (Alq3) have been vacuum-deposited by simultaneous glow discharge of 5% SiH4 + 95 % Ar gas mixture and thermal co-evaporation of Alq3. Photoluminescence spectrum of a-Si:H/Alq3 blend coincident with one of Alq3 was observed at room temperature. |
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