首页 | 本学科首页   官方微博 | 高级检索  
     


Effects of excitation spectral width on decay profile of weakly confined excitons
Authors:O. Kojima  T. Isu  J. Ishi-Hayase  A. Kanno  R. Katouf  M. Sasaki  M. Tsuchiya
Affiliation:1. National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan;2. Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;3. Department of Nano-Technology, Institute of Technology and Science, The University of Tokushima, 2-1 Minamijosanjima-cho, Tokushima 770-8506, Japan;4. CREST, Japan Science and Technology Agency, Japan;1. Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid, Spain;2. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, 28049 Madrid, Spain;3. Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid, Spain
Abstract:
We report the effect due to a simultaneous excitation of several exciton states on the radiative decay profiles on the basis of the nonlocal response of weakly confined excitons in GaAs thin films. In the case of excitation of single exciton state, the transient grating signal has two decay components. The fast decay component comes from nonlocal response, and the long-lived component is attributed to free exciton decay. With an increase of excitation spectral width, the nonlocal component becomes small in comparison with the long-lived component, and disappears under irradiation of a femtosecond-pulse laser with broader spectral width. The transient grating spectra clearly indicates the contribution of the weakly confined excitons to the signal, and the exciton line width hardly changes by excitation spectral width. From these results, we concluded that the change of decay profile is attributed not to the many-body effect but to the effect of simultaneous excitation of several exciton states.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号