The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation |
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| Authors: | K Morigaki K Takeda H Hikita C Ogihara P Roca i Cabarrocas |
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| Institution: | 1. Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193, Japan;2. Electro-Chemical and Cancer Institute, Kokuryo, Chofu, Tokyo 182-0022, Japan;3. Physics Laboratory, Meikai University, Urayasu, Chiba 279-8550, Japan;4. Department of Applied Science, Yamaguchi University, Tokiwadai, Ube 755-8611, Japan;5. Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Palaiseau cedex 91128, France;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
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| Abstract: | Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed. |
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