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ESR study of the hydrogenated nanocrystalline silicon thin films |
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| Authors: | Tining Su Tong Ju Baojie Yan Jeffrey Yang Subhendu Guha P Craig Taylor |
| Institution: | 1. Department of Physics, Colorado School of Mines, Golden, CO 80401, USA;2. Department of Physics, University of Utah, Salt Lake City, UT 84112, USA;3. United Solar Ovonic LLC, Troy, MI 48084, USA;1. Colorado Energy Research Institute, Colorado School of Mines, Golden, CO, USA;2. National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA;3. Department of Physics and Astronomy, University of Toledo, Toledo, OH, USA;4. Department of Physics, Syracuse University, Syracuse, NY, USA |
| Abstract: | We studied the stability and light-induced paramagnetic centers in hydrogenated nanocrystalline silicon thin films (nc-Si:H) by electron-spin-resonance (ESR) and photothermal-deflection-spectroscopy (PDS). There is no measurable change in defect density upon illumination with white light with a light intensity of 300 mW cm?2 for 300 h. At low temperatures, upon illumination with sub-bandgap light, a light-induced ESR signal appears. This signal is similar to that in hydrogenated micro-crystalline silicon (μc-Si:H). |
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