Optical properties and structural characteristics of ZnO thin films grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy |
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| Authors: | Xinhua Pan Ping Ding Haiping He Jingyun Huang Bin Lu Honghai Zhang Zhizhen Ye |
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| Institution: | 1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People''s Republic of China;2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People''s Republic of China;1. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, Jilin, PR China;2. State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023, PR China;1. Smart Materials Analytic Research and Technology (SMART) Lab, Department of Physics, St. Berchmans College, Changanassery, Kerala 686101, India;2. Assistant Professor, Kuriakose Elias College, Mannanam, Kottayam, Kerala 686561, India;3. School of Chemistry, University of Hyderabad, Hyderabad 500046, India;4. Principal, St. Aloysius College, Edathua, Alappuzha, Kerala 689573, India;1. School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;2. College of Engineering, Swansea University, Swansea SA1 8EN, UK;3. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China;4. College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | We investigated structural and optical properties of ZnO thin films grown on (112?0) a-plane sapphire substrates using plasma-assisted molecular beam epitaxy. Negligible biaxial stress in ZnO thin films is due to the use of (112?0) a-plane sapphire substrates and slow substrate cooling. The 14 K photoluminescence spectrum shows a blueshift of energy positions compared with ZnO single crystal. A donor with binding energy of 43 meV and an acceptor with binding energy of ～170 meV are identified by well-resolved photoluminescence spectra. A characteristic emission band at 3.320 eV (so-called A-line) is studied. Based on analysis from photoluminescence spectra, the origin of the A-line, it seems, is more likely an (e, A°) transition, in which defect behaves as an acceptor. The room-temperature photoluminescence is dominated by the FX at 3.307 eV, which is an indication of strongly reduced defect density in ZnO thin films. |
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