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Mode-locked semiconductor disk lasers with weakly saturated absorbers
Authors:Esa J. Saarinen  Jari Nikkinen  Oleg G. Okhotnikov
Affiliation:Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, Fin 33101, Finland
Abstract:
The effect of absorber saturation on pulse shaping was studied both numerically and experimentally in a semiconductor disk laser. It was found that steady-state mode locking can be achieved even with very weak saturation of the absorber when the pulse energy is well below the saturation energy of absorption. The study discloses for the first time the direct impact of absorber modulation depth on the pulse width. Numerical analysis confirms that partial bleaching of absorption is adequate for formation of stable mode locking in SDLs. The fast gain dynamics of the semiconductor medium approach the dynamics of a slow gain medium at low pulse energies and high repetition rates with a pulse period much shorter than the gain recovery time. The presented results are of practical importance for multigigahertz repetition rate lasers, indicating that sufficient pulse shaping can occur when the saturable absorber is not fully bleached.
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