Edge photoluminescence spectra and the intensity of the intracenter <Emphasis Type="Italic">f</Emphasis>-<Emphasis Type="Italic">f</Emphasis> transitions in Er-and Sm-doped GaN crystals |
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Authors: | V V Krivolapchuk V V Lundin M M Mezdrogina A V Nasonov S V Rodin N M Shmidt |
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Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | Doping of GaN crystals prepared by various methods (HVPE and MOCVD) with various degrees of perfection of the mosaic structure, using rare-earth (RE) ions has been studied. An analysis of the shape of the photoluminescence spectra obtained before and after the doping showed that, as the defect concentration decreases, the intracenter f-f transitions characteristic of RE ions, at 1.54 and 0.54 µm in Er3+ and 0.72 µm in Sm2+, become observable. The intracenter f-f transitions of RE ions are seen, as a rule, in epitaxial layers with well-aggregated and relaxed domains and are absent in the case of a mosaic structure containing domains in the near-surface part of the epitaxial layer that are not fully coalesced. RE doping of the crystals under study was observed to initiate defect gettering. |
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