Abstract: | For the first time, research on the unique galvanomagnetic properties of the hole gas in the channels of selectively doped CVD Ge-Ge1−XSiX (X≤0, 2) superlattices with strained Ge layers was carried out. We have obtained a high value of the hole mobility 1.5 × 104 cm2/V s (T = 4, 2 K) at a hole concentrations of (1–5) × 1017 cm−3 in SLs channels. It is shown that the main contribution into the longitudinal conductivity of strained Ge-Ge1−XSiX SL due to light hole band splitting under the strains in Ge layers. |