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Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN |
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| Authors: | Giovanni Bruno Maria M. Giangregorio April S. Brown Soojeong Choi |
| Affiliation: | a Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari, Italy b Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC, USA |
| Abstract: | GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. |
| Keywords: | GaN Epitaxy Spectroscopic ellipsometry |
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