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High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions
Authors:Satoshi Ninomiya  Takaaki Aoki  Toshio Seki  Jiro Matsuo
Institution:Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto 611-0011, Japan
Abstract:Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/cluster. Sin+ ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size.
Keywords:Ar cluster ion  Secondary ion  Low energy  Sputtering yield
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