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Microstructure and electrical properties of (Zr, Sn)TiO4 thin film deposited on Si(1 0 0) using a sol-gel process |
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| Authors: | Ru-Yuan Yang Yan-Kuin Su Min-Hang Weng Yung-Shou Ho |
| Institution: | a Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan b Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan c National Nano Device Laboratories, Tainan Science-based Industrial Park Hsin-shi, No. 27, Nanke 3rd. Road, Tainan 744, Taiwan d Department of Applied Chemistry, Fooyin University, Kaohsiung, Taiwan |
| Abstract: | Polycrystalline zirconium tin titanate (Zr0.8Sn0.2TiO4, ZST) thin films with thickness of 81 nm were deposited successfully along the (1 0 0) on a p-type Si substrate by an improved sol-gel method. The deposited films were crystallized when annealing temperature was up to 450 °C. The thickness and compositions of the interface layer between the ZST films and Si substrate were identified by high-resolution transmission electron microscope (HRTEM). The electrical properties such as leakage current density, flat-band voltage and capacitance of the films were measured and discussed. Furthermore, the mechanism of the leakage current was also investigated. |
| Keywords: | Microstructure Electrical properties (Zr Sn)TiO4 Sol-gel Thin film |
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