Structural and optical characterization of the propolis films |
| |
| Authors: | S.I. Drapak A.P. Bakhtinov I.T. Drapak |
| |
| Affiliation: | a Frantsevich Institute of Materials Science Problems, The National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001 Chernivtsi, Ukraine
b Chernivtsi National University, 2 Kotsyubynskii Str., 58012 Chernivtsi, Ukraine |
| |
| Abstract: | We have performed structural and optical characterizations of the propolis (an organic entity of biological nature) films grown on various non-organic substrates. The films were grown from a propolis melt or a propolis alcohol solution. The crystal structure has been observed in the films precipitated from the solution onto substrates such as an amorphous glass and sapphire or semiconductor indium monoselenide. For any growth method, the propolis film is a semiconductor with the bandgap of 3.07 eV at 300 K that is confirmed by a maximum in photoluminescence spectra at 2.86 eV. We argue that propolis films might be used in various optoelectronic device applications. |
| |
| Keywords: | Heterostructure Morphology Semiconductor |
| 本文献已被 ScienceDirect 等数据库收录！ |
