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Investigation of a 4H-SiC metal-insulationsemiconductor structure with an A1203/SiO2 stacked dielectric |
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| Affiliation: | School Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China |
| Abstract: | 4H-SiC, Al2O3, high-k dielectric |
| Keywords: | 4H-SiC Al2O3 high-k dielectric |
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