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Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-k gate dielectric |
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| Authors: | Li Cong Zhuang Yi-Qi Zhang Li and Bao Jun-Lin |
| Affiliation: | School of Microelectronics, Xidian University, Xi＇an 710071, China |
| Abstract: | high-k gate dielectric, fringing-induced barrier lowering, analytical model |
| Keywords: | high-k gate dielectric fringing-induced barrier lowering analytical model |
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