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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing |
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| Authors: | Shu-Xing Zhou Li-Kun Ai Ming Qi An-Huai Xu Jia-Sheng Yan Shu-Sen Li Zhi Jin |
| Affiliation: | (Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Hubei Key Laboratory of High Power Semiconductor Technology,Xiangyang 441021,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) |
| Abstract: | Carbon-doped InGaAsBi films on InP∶Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt... |
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