Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors |
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Authors: | Irina Kudryavtseva Aleksandr Lushchik Aarne Maaroos Zhannur Azmaganbetova Turlybek Nurakhmetov and Zhussupbek Salikhoja |
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Institution: | (1) Department of Biology and Chemistry, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong S.A.R., People’s Republic of China |
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Abstract: | A comparative study of the excitation of luminescence by VUV radiation as well as of thermally and photostimulated luminescence
has been carried out for CaSO4:Tb3+ and CaSO4:Gd3+ phosphors, where Na+ or F− ions are used for charge compensation. The distinction in hole processes for the phosphors with Na+ or F− compensators is determined by the differing thermal stability of the holes localized at/near Tb3+Na+ and Gd3+Na+ (up to 100–160 K) or at/near Tb3+F−
V
Ca and Gd3+F−
V
Ca centers involving also a cation vacancy (up to 400–550 K). Tunnel luminescence in the pairs of localized electrons and holes
nearby Tb3+ or Gd3+ has been detected. The mechanisms of electron-hole, hole-electron and tunnel recombination luminescence as well as a subsequent
released energy transfer to RE3+ ions are considered. |
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Keywords: | |
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