Analytical solution of the Boltzmann--Poisson equation and its application to MIS tunneling junctions |
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Authors: | Zhang Li-Zhi and Wang Zheng-Chuan |
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Institution: | College of Physical Sciences, Graduate University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | In order to consider quantum transport under the influence of an
electron--electron (e--e) interaction in a mesoscopic conductor, the
Boltzmann equation and Poisson equation are investigated jointly.
The analytical expressions of the distribution function for the Boltzmann
equation and the self-consistent average potential concerned with e--e
interaction are obtained, and the dielectric function appearing in
the self-consistent average potential is naturally generalized
beyond the Thomas--Fermi approximation. Then we apply these results to
the tunneling junctions of a metal--insulator--semiconductor (MIS) in
which the electrons are accumulated near the interface of the
semiconductor, and we find that the e--e interaction plays an
important role in the transport procedure of this system. The
electronic density, electric current as well as screening Coulombic
potential in this case are studied, and we reveal the time and
position dependence of these physical quantities explicitly affected by the e--e
interaction. |
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Keywords: | Boltzmann--Poisson equation quantum transport self-consistent average potential MIS tunneling
junction |
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