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| 半导体纳米颗粒电子的超快弛豫过程 | |
| 引用本文： | 陈振宇,梁瑞生,黄曙亮,廖浩祥,马志俭. 半导体纳米颗粒电子的超快弛豫过程[J]. 光子学报, 2014, 39(10): 1738-1741. DOI: 10.3788/gzxb20103910.1738 |
| 作者姓名： | 陈振宇 梁瑞生 黄曙亮 廖浩祥 马志俭 |
| 作者单位： | （华南师范大学 信息光电子科技学院 光子信息技术广东省高校重点实验室,广州 510006） |
| 基金项目： | 国家重点基础研究发展计划（2007CB307002）资助 |
| 摘 要： | 为了研究在飞秒激光作用下半导体纳米颗粒的超快动力学过程,建立了一个带表面态的三能级结构的载流子弛豫简化模型,得出各能级的电子速率方程.利用数值模拟方法模拟出各能级电子密度和差分吸收率随时间的变化情况,得知由于吸收截面的变化,差分吸收谱会有一个超快的变化过程.并将模拟结果与Fanxin Wu等人的实验结果相比较,其曲线特征基本一致.说明该模型有一定的合理性. |
| 关 键 词： | 半导体纳米颗粒 载流子弛豫 速率方程 数值模拟 |
| 收稿时间： | 2009-10-28 |
Electron Ultrafast Relaxation Process in Semiconductor Nanoparticles |
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| CHEN Zhen-yu,LIANG Rui-sheng,HUANG Shu-liang,LIAO Hao-xiang,MA Zhi-jian. Electron Ultrafast Relaxation Process in Semiconductor Nanoparticles[J]. Acta Photonica Sinica, 2014, 39(10): 1738-1741. DOI: 10.3788/gzxb20103910.1738 | |
| Authors: | CHEN Zhen-yu LIANG Rui-sheng HUANG Shu-liang LIAO Hao-xiang MA Zhi-jian |
| Affiliation: | (Laboratory of Photonic Information Technology,School of Information and Optoelectronic Science and Engineering,South China Normal University,Guangzhou 510006,China) |
| Abstract: | To study the dynamic process excited by femtsecond laser,a carrier model with three energy level and trap is constructed,with which the electron rate equation is obtained.The numerical simulation is used to calculate the electron number change of each energy level and the differentiated absorbtion rate as the time goes by.With the change of the electron’s absorption cross-section,differentiated absorbtion rate will have a ultrafast change process.Compared with the experimental result of Fanxin Wu,the differentiated absorbtion rate curves are basically the same,which shows the model have some rationality. |
| Keywords: | Semiconductor nanoparticle Carrier relaxation Rate equation Numerical simulation |
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